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this is information on a product in full production. march 2013 docid022848 rev 3 1/25 25 stb31n65m5, STF31N65M5, stfi31n65m5, stp31n65m5, stw31n65m5 n-channel 650 v, 0.124 ? typ., 22 a mdmesh? v power mosfet in d 2 pak, to-220fp, i 2 pakfp, to-220 and to-247 packages datasheet ? production data figure 1. internal schematic diagram features ? worldwide best r ds(on) * area ? higher v dss rating and high dv/dt capability ? excellent switching performance ? 100% avalanche tested applications ? switching applications description these devices are n-channel mdmesh? v power mosfets based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. $ 0 y ' 7 $ % * 6 d 2 pak to-220 to-220fp to-247 i 2 pakfp 1 3 2 tab 1 2 3 1 2 3 tab 1 2 3 1 2 3 order codes v dss @ t jmax r ds(on) max i d stb31n65m5 710 v < 0.148 22 a STF31N65M5 stfi31n65m5 stp31n65m5 stw31n65m5 table 1. device summary order code marking package packaging stb31n65m5 31n65m5 d 2 pak tape and reel STF31N65M5 to-220fp tube stfi31n65m5 i 2 pakfp stp31n65m5 to-220 stw31n65m5 to-247 www.st.com
contents stb31n65m5, STF31N65M5, stfi31n65m5, stp31n65m5, stw31n65m5 2/25 docid022848 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 docid022848 rev 3 3/25 stb31n65m5, STF31N65M5, stfi31n65m5, stp31n65m5, stw31n65m5 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d 2 pak to-220 to-247 to-220fp i 2 pakfp v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 22 22 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 13.9 13.9 (1) a i dm (1) drain current (pulsed) 88 88 (1) a p tot total dissipation at t c = 25 c 150 30 w dv/dt (2) 2. i sd 22 a, di/dt 400 a/ s; v ds peak < v (br)dss , v dd =400 v peak diode recovery voltage slope 15 v/ns dv/dt (3) 3. v ds 480 v mosfet dv/dt ruggedness 50 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit d 2 pak to-220fp i 2 pakfp to-220 to-247 r thj-case thermal resistance junction- case max 0.83 4.17 0.83 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board. thermal resistance junction- pcb max 30 c/w r thj-amb thermal resistance junction- ambient max 62.5 50 c/w electrical ratings stb31n65m5, STF31N65M5, stfi31n65m5, stp31n65m5, stw31n65m5 4/25 docid022848 rev 3 table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetetive or not repetetive (pulse width limited by t jmax ) 5a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 410 mj docid022848 rev 3 5/25 stb31n65m5, STF31N65M5, stfi31n65m5, stp31n65m5, stw31n65m5 electrical characteristics 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 345v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 11 a 0.124 0.148 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 1865 45 4.2 - pf pf pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 520 v, v gs = 0 -146-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -43-pf r g intrinsic gate resistance f = 1 mhz open drain - 2.8 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 11 a, v gs = 10 v (see figure 20 ) - 45 11.5 20 - nc nc nc electrical characteristics stb31n65m5, STF31N65M5, stfi31n65m5, stp31n65m5, stw31n65m5 6/25 docid022848 rev 3 table 7. switching times symbol parameter test conditions min. typ. max unit t d (v) t r (v) t f (i) t c(off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 14 a, r g = 4.7 , v gs = 10 v (see figure 21 and figure 24 ) - 46 8 8.5 11 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 22 88 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 22 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 22 a, di/dt = 100 a/ s v dd = 100 v (see figure 21 ) - 336 5 30 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 22 a, di/dt = 100 a/ s v dd = 100 v, t j = 150 c (see figure 21 ) - 406 6 31 ns c a docid022848 rev 3 7/25 stb31n65m5, STF31N65M5, stfi31n65m5, stp31n65m5, stw31n65m5 electrical characteristics 2.1 electrical characteristics (curves) figure 2. safe operating area for d2pak and to220 figure 3. thermal impedance for d2pak and to-220 figure 4. safe operating area for to-220fp and i 2 pakfp figure 5. thermal impedance for to-220fp and i 2 pakfp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms am15197v1 i d 10 1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms 0.1 am15190v1 i d 10 1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms 0.1 am15191v1 electrical characteristics stb31n65m5, STF31N65M5, stfi31n65m5, stp31n65m5, stw31n65m5 8/25 docid022848 rev 3 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 30 20 10 0 0 10 v ds (v) 20 (a) 5 15 40 v gs = 6 v v gs = 9, 10 v 25 v gs = 7 v v gs = 8 v am15193v1 i d 30 20 10 0 3 5 v gs (v) 7 (a) 4 6 8 40 9 v ds = 25 v am15198v1 v gs 6 4 2 0 0 10 q g (nc) (v) 40 8 20 30 10 v dd =520v i d =11a 50 300 200 100 0 400 500 v ds (v) v ds 12 600 am15199v1 r ds(on) 0.12 0.115 0.11 0.105 0 10 i d (a) ( ) 5 15 0.125 0.13 0.135 v gs =10v 20 0.14 0.145 am15200v1 c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 10000 100 ciss coss crss am15202v1 e oss 2 1 0 0 100 v ds (v) (j) 400 3 200 300 4 5 500 600 6 7 8 am15195v1 docid022848 rev 3 9/25 stb31n65m5, STF31N65M5, stfi31n65m5, stp31n65m5, stw31n65m5 electrical characteristics figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized b vdss vs temperature figure 18. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d = 250 a v ds = v gs am05459v2 r ds(on) 1.7 1.3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 v gs = 10 v i d = 11 a am05460v2 v sd 0 20 i sd (a) (v) 10 50 30 40 0 0.2 0.4 0.6 0.8 1.0 1.2 t j =-50c t j =150c t j =25c am05461v1 v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.04 1.06 1.02 i d = 1ma 1.08 am10399v1 e 0 0 20 r g ( ) ( j) 10 30 50 100 40 i d =14a v dd =400v eon eoff 150 v gs =10v 200 250 300 am15196v1 test circuits stb31n65m5, STF31N65M5, stfi31n65m5, stp31n65m5, stw31n65m5 10/25 docid022848 rev 3 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive waveform figure 24. switching time waveform $ 0 y 9 * 6 3 : 9 ' 5 * 5 / ' 8 7 ? ) ? ) 9 ' ' $ 0 y 9 ' ' n ? n ? n ? n ? n ? 9 9 l 9 9 * 0 $ ; ? ) 3 : , * & |